Tunnel Junctions Research Articles

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions.

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.

Tunable High‐Temperature Tunneling Magnetoresistance in All‐van der Waals Antiferromagnet/Semiconductor/Ferromagnet Junctions

AbstractMagnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices.

Effect of the mixing of s-wave and chiral p-wave pairing on electrical shot noise properties of normal metal/superconductor tunnel junctions

Abstract We study theoretically the electrical shot noise properties of tunnel junctions between a normal metal and a superconductor with the mixture of singlet $s$-wave and chiral triplet $p$-wave pairing due to broken inversion symmetry. We investigate how the shot noise properties vary as the relative amplitude between the two parity components in the pairing potential is changed. It is demonstrated that some characteristics of the electrical shot noise properties of such tunnel junctions may depend sensitively on the relative amplitude between the two parity components in the pairing potential, and some significant changes may occur in the electrical shot noise properties when the relative amplitude between the two parity components is varied from the singlet $s$-wave pairing dominated regime to the chiral triplet $p$-wave pairing dominated regime. In the chiral triplet $p$-wave pairing dominated regime, the ratio of noise power to electric current is close to $2e$ both in the in-gap and in the out-gap region. In the singlet $s$-wave pairing dominated regime, the value of this ratio is close to $4e$ in the inner gap region but may reduce to about $2e$ in the outer gap region as the relative amplitude of the chiral triplet pairing component is increased. The variations of the differential shot noise with the bias voltage also exhibit some significantly different features in different regimes. Such different features can serve as useful diagnostic tools for the determination of the relative magnitude of the two parity components in the pairing potential.

Highly Reliable Magnetic Memory-Based Physical Unclonable Functions.

Magnetic random-access memory (MRAM), which stores information through control of the magnetization direction, offers promising features as a viable nonvolatile memory alternative, including high endurance and successful large-scale commercialization. Recently, MRAM applications have extended beyond traditional memories, finding utility in emerging computing architectures such as in-memory computing and probabilistic bits. In this work, we report highly reliable MRAM-based security devices, known as physical unclonable functions (PUFs), achieved by exploiting nanoscale perpendicular magnetic tunnel junctions (MTJs). By intentionally randomizing the magnetization direction of the antiferromagnetically coupled reference layer of the MTJs, we successfully create an MRAM-PUF. The proposed PUF shows ideal uniformity and uniqueness and, in particular, maintains performance over a wide temperature range from -40 to +150 °C. Moreover, rigorous testing with more than 1584 challenge-response pairs of 64 bits each confirms resilience against machine learning attacks. These results, combined with the merits of commercialized MRAM technology, would facilitate the implementation of MRAM-PUFs.

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Restricting Conformational Space: A New Blueprint for Electrically Switchable Self-Assembled Monolayers.

Tunnel junctions comprising self-assembled monolayers (SAMs) from liquid crystal-inspired molecules show a pronounced hysteretic current-voltage response, due to electric field-driven dipole reorientation in the SAM. This renders these junctions attractive device candidates for emerging technologies such as in-memory and neuromorphic computing. Here, the novel molecular design, device fabrication, and characterization of such resistive switching devices with a largely improved performance, compared to the previously published work are reported. Those former devices suffer from a stochastic switching behavior limiting reliability, as well as from critically small read-out currents. The present progress is based on replacing Al/AlOx with TiN as a new electrode material and as a key point, on redesigning the active molecular material making up the SAM: a previously present, flexible aliphatic moiety has been replaced by a rigid aromatic linker, thereby introducing a molecular "ratchet". This restricts the possible molecular conformations to only two major states of opposite polarity. The above measures have resulted in an increase of the current density by five orders of magnitude as well as in an ON/OFF conductance ratio which is more than ten times higher than the individual scattering ranges of the high and low resistance states.

Textured Perovskite/Silicon Tandem Solar Cells Achieving Over 30% Efficiency Promoted by 4-Fluorobenzylamine Hydroiodide

HighlightsEvaporation and solution two-step hybrid process are used to fabricate conformal growth of perovskite film on textured silicon substrates.F-PMAI additive enlarged the perovskite grains, induced the (111) preferred orientation and passivated interface defects.We obtained a champion efficiency of 30.05% for a monolithic perovskite/silicon tandem solar cell based on a silicon thin film tunneling junction.

Temperature effect on a weighted vortex spin-torque nano-oscillator for neuromorphic computing

In this work, we present fabricated magnetic tunnel junctions (MTJs) that can serve as magnetic memories (MMs) or vortex spin-torque nano-oscillators (STNOs) depending on the device geometry. We explore the heating effect on the devices to study how the performance of a neuromorphic computing system (NCS) consisting of MMs and STNOs can be enhanced by temperature. We further applied a neural network for waveform classification applications. The resistance of MMs represents the synaptic weights of the NCS, while temperature acts as an extra degree of freedom in changing the weights and TMR, as their anti-parallel resistance is temperature sensitive, and parallel resistance is temperature independent. Given the advantage of using heat for such a network, we envision using a vertical-cavity surface-emitting laser (VCSEL) to selectively heat MMs and/or STNO when needed. We found that when heating MMs only, STNO only, or both MMs and STNO, from 25 to 75 °C, the output power of the STNO increases by 24.7%, 72%, and 92.3%, respectively. Our study shows that temperature can be used to improve the output power of neural networks, and we intend to pave the way for future implementation of a low-area and high-speed VCSEL-assisted spintronic NCS.

All-Electrical Driving and Probing of Dressed States in a Single Spin.

The subnanometer distance between tip and sample in a scanning tunneling microscope (STM) enables the application of very large electric fields with a strength as high as ∼1 GV/m. This has allowed for efficient electrical driving of Rabi oscillations of a single spin on a surface at a moderate radiofrequency (RF) voltage on the order of tens of millivolts. Here, we demonstrate the creation of dressed states of a single electron spin localized in the STM tunnel junction by using resonant RF driving voltages. The read-out of these dressed states was achieved all electrically by a weakly coupled probe spin. Our work highlights the strength of the atomic-scale geometry inherent to the STM that facilitates the creation and control of dressed states, which are promising for the design of atomic scale quantum devices using individual spins on surfaces.

Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

Writing and reading magnetization states via strain in Fe3GaTe2/h-BN/MnBi2Te4 junction

Writing and reading of magnetization states via mechanical strain are crucial for the development of ultralow-power spintronic devices. In this study, a van der Waals magnetic tunnel junction (vdW MTJ) of Fe3GaTe2/h-BN/MnBi2Te4 is constructed to explore the magnetization reversal under in-plane biaxial strains. Interestingly, the interlayer magnetic coupling of devices can be tuned to ferromagnetic and antiferromagnetic states by tensile and compressive strains, respectively. The various magnetic couplings on applied strains are analyzed using the superexchange theory. Importantly, the interlayer coupling nearly vanishes after removing external strains, ensuring the nonvolatility of magnetization reversal, resulting in the nonvolatile writing of magnetization states in the present vdW MTJ. Moreover, the tunneling magnetoresistance ratio of the device is up to −5745%, which remains −1478% even with −2% strain, showing great potential for reading the magnetization states. Therefore, this work provides an alternate avenue to write and read magnetization states in one vdW MTJ under biaxial strains.

Ultrahigh tunneling magnetoresistance ratios in the sandwich-structured full MXene Cr2NO2/Ti2CO2/Cr2NO2 van der Waals heterojunction

In this study, the structure, magnetism, energy-band, and spin-dependent electron transport properties of the Cr2NO2/Ti2CO2/Cr2NO2 magnetic tunnel junction (MTJ) were investigated using a combination of density functional theory and non-equilibrium Green’s function methods. The calculation band structures indicate that Cr2NO2 MXene is an “ideal” half-metal with a magnetic moment of 5.00 μB. Ti2CO2 MXene is an indirect band-gap semiconductor, and the Cr2NO2/Ti2CO2-stacked heterojunction reserve 100 % spin polarization because of the weak Van der Waals interface interaction. For the equilibrium state of the most stable Cr2NO2/Ti2CO2/Cr2NO2 MTJ, the total transmission coefficient for parallel configuration is about eleven orders of magnitude larger than that for anti-parallel configuration. An ultrahigh tunneling magnetoresistance (TMR) ratio of 1.92×1013\\% can be detected. For the non-equilibrium state, our calculation results show that the Cr2NO2/Ti2CO2/Cr2NO2 MTJ has a good transport performance when bias voltage ranges from 0 V to 0.1 V. The minimum TMR ratio of 7.51×1012% is detected at the bias voltage of 0.09 V, which can be considered as an excellent TMR ratio. Therefore, the Cr2NO2/Ti2CO2/Cr2NO2 MTJ is an excellent candidate for spintronic device application.

Design space exploration and power optimization of STT MRAM using trimmed fin Asymmetric FinFET

-The switching current requirement of magnetic tunnel junction (MTJ) in STT MRAM is highly asymmetric. This results in unnecessary higher power dissipation due to excess write current in one direction. To tackle this issue, we present a novel STT MRAM cell that utilizes the trimmed fin asymmetric FinFET (A-FinFET) as an access device, which has an impressive asymmetry in the bidirectional current and smaller gate capacitance compared to the symmetric FinFET device. Our approach begins with the development of a SPICE model for the A-FinFET, achieved by calibrating the BSIM-CMG model to replicate the characteristics of the A-FinFET. Further, it is used to evaluate the performance of STT MRAM using a comprehensive analysis from the cell to the architecture level, employing HSPICE and NVsim tools. The findings indicate significant enhancements with the proposed design, leading to a remarkable 18 % reduction in power consumption without compromising area. Additionally, the effective area of wordline drivers is reduced by 11 % compared to the symmetric device implementation.

The fabrication of spin transfer torque-based magnetoresistive random access memory cell with ultra-low switching power

Abstract We conducted research on the integration technology of a spin transfer torque-based magnetoresistive random access memory (STT-MRAM) cell (one transistor, one magnetic tunnel junction – 1T-1MTJ) on an 8-inch process platform. By combining a 0.5 μm CMOS front end of line process and STT-MTJ back end of line process, a 1T-1MTJ device with an MTJ of approximately 80 nm is realized. The Resistance(R)-magnetic field(H) measurement reveals a coercive force of approximately 450 Oe for the MTJ. Nevertheless, the 1T-1MTJ device exhibits a critical switching current of 4.7 μA (from high to low resistance state) and 17.9 μA (from low to high resistance state), accompanied by corresponding critical switching voltages of 0.05 V and 0.16 V, respectively, which is extremely low in an STT-MRAM with dual CoFeB/MgO interface free layer. Our findings demonstrate the potential for application in ultra-low-power portable mobile devices and embedded systems.

Fabrication of half-metallic Co2FeAlxSi1–x thin film with small magneto-crystalline anisotropy constant K1

A tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic sensor workable at room temperature. To achieve smaller magnetic field detection, both a high TMR ratio and small magnetic anisotropy of the free layer are required. In this study, we developed single crystalline Co-based Heusler alloy Co2FeAlxSi1-x films as the free layer of TMR sensors and systematically investigated their crystalline and magnetic properties. The magnetic tunnel junction (MTJ) with these alloys is a promising device for highly sensitive TMR sensors due to their half-metallicity. We evaluated the B2 and L21 ordering parameters SB2 and SL21. SB2 was above 80 % for all the samples and SL21 was 48 % at a maximum, which indicates that all the samples exhibit half-metallicity. In addition, we evaluated their first magneto-crystalline anisotropy constant K1 from magnetization curves. K1 changed from positive to negative as Al component x increases and K1 was about 1200 erg/cc at x = 0.33. These results indicate that Co2FeAlxSi1-x films around x = 0.33 have a good candidate for the free layer of TMR sensors because of their half-metallicity and small magnetic anisotropy.

Process-in-Memory realized by nonvolatile Task-Scheduling and Resource-Sharing XNOR-Net hardware Accelerator architectures

Due to the success of artificial intelligence systems in solving complex problems, these systems have been investigated in many applications. There is an increasing demand for these systems in many new applications. The XNOR-Net, a binary neural network, is a promising candidate for implementing these systems in devices with limited power and hardware resources. Efficient hardware implementation of XNOR-Nets is critical and has been widely investigated in recent research. In this paper, a resource-sharing gate and architecture and a task-scheduling gate and architecture have been proposed. To reduce power consumption, the proposed nonvolatile logic-in-memory gates are designed based on the magnetic tunnel junction (MTJ) and carbon nanotube field-effect transistor (CNTFET) devices. Using the proposed resource-sharing gate for hardware implementation of XNOR-Net minimizes the number of flip-flops, power consumption, PDP, and area by at least 75%, 75%, 60%, and 42%, respectively, as compared to its state-of-the-art counterparts. Also, using the proposed task-scheduling design to implement the XNOR-Net on 2, 4, and 8 datasets, the power consumption is reduced by at least 24%, 54%, and 65%, respectively, compared to its state-of-the-art counterparts .

Half-metallic Heusler alloy/AlP based magnetic tunnel junction

Exploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices. Here, density functional theory in conjunction with non-equilibrium Green’s functions has been systematically employed to investigate two prominent Heusler alloys, Co2CrAl and CoFeCrAl, which are of direct interest to the candidates of magnetic tunnel junction. The electronic structures of two Hesler alloys reveal that both exhibit characteristics of half-metallic ferromagnets, featuring a substantial spin-down bandgap and achieving 100% spin polarization. The tunneling magnetoresistance ratios obtained for Co2CrAl/AlP/Co2CrAl and CoFeCrAl/AlP/CoFeCrAl magnetic tunnel junctions are determined to be 173% and 59%, respectively, with the former exhibiting superior device characteristics. Therefore, the Co2CrAl/AlP-based magnetic tunnel junction demonstrates ideal performance, providing new opportunities for two-dimensional spintronics.

Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions

Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions

Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization

Stochastic magnetic tunnel junctions (s-MTJs) are attracting attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance R of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H z and temperatures T = 20 °C–130 °C. We observe that both relaxation time (time-domain response) and the slope of the R – Hz curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.

Enhancing ferroelectricity in HfAlOx-based ferroelectric tunnel junctions: A comparative study of MFS and MFIS structures with ultrathin interfacial layers

This study explores the potential advantages of metal–ferroelectric–insulator–semiconductor (MFIS) structures compared with established metal–ferroelectric–semiconductor (MFS) and metal–ferroelectric–metal structures in the context of nonvolatile memory devices. Despite the superior performance of MFS structures in terms of electric field maintenance, switching speed, and power consumption, the presence of interface-related issues between the ferroelectric material and the semiconductor may degrade device performance. We propose an MFIS structure incorporating ultrathin interfacial layers (ILs) of SiO2, HfO2, and ZrO2 to address these issues. These insulator layers enhance device endurance by reducing physical stress and trap density at the interface, thereby improving electrical performance and long-term stability. Moreover, the presence of an IL reduces charge leakage between the ferroelectric layer and semiconductor, contributing to the resolution of the sneak path current problem. An additional feature of MFIS devices is their self-rectifying behavior, simplifying circuit design and manufacturing processes by eliminating the need for an external rectification circuit, consequently reducing costs. Through a series of experiments, this study evaluates the performance of the MFIS structure, investigates the ferroelectric properties of HfAlOx-based FTJs, and examines the conduction mechanism of the MFIS structure. By comparing the o-phase of MFS, SiO2, HfO2, and ZrO2 devices via grazing incidence X-ray diffraction (GIXRD) and using the positive-up-negative-down method to extract polarization and coercive voltage, we provide a comprehensive investigation of the impact of ultrathin ILs on ferroelectric properties. This research aims to offer valuable insights into the advancement of memory device technologies, presenting the MFIS structure as a promising platform for next-generation memory technologies. Further sections will elaborate on the experimental setup, methodology, and detailed study findings.